2SC2579

JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION ・With TO-3PN package ・High power dissipation ・High current capability APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 160 6 8 80 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC2579 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 IC=10mA ;RBE=∞ IE=5mA ; IC=0 160 V V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage 160 V Emitter-base breakdown voltage 6 V ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 50 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V fT Transition frequency IC=0.5A ; VCE=10V 20 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2579 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3