2SC2582

JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION ・With TO-126 package ・Large collector power dissipation ・High transition frequency APPLICATIONS ・Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55～+150 ℃ ℃ Open collector CONDITIONS VALUE 45 35 5 1 1.5 1.2 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2582 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICEO Collector cut-off current VCE=20V; IB=0 100 μA ICBO Collector cut-off current VCB=20V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=500mA ; VCE=10V 85 340 hFE-2 DC current gain IC=1A ; VCE=5V 50 COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=50mA ; VCE=10V 200 MHz hFE-1 Classifications Q 85-170 R 120-240 S 170-340 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2582 Fig.2 Outline dimensions 3