2SC2590

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT ・Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SC2590 ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 0.5 1.0 1.2* 150 -55~150 UNIT V V V A A W ℃ ℃ Note) *: Without heat sink JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=100μA;IB=0 IE=10μA ;IC=0 IC=0.3A ;IB=30mA IC=0.3A ;IB=30mA IC=150mA ; VCE=10V IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCB=10V,f=200MHz 90 65 MIN 120 5 2SC2590 TYP. MAX UNIT V V 1.0 1.2 220 100 20 200 V V pF MHz hFE-1 Classifications Q 90-155 R 130-220 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2590 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC2590 4