2SC2768

JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 6 1.5 40 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2768 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 IC=100μA ; IE=0 IE=100μA ; IC=0 200 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage 250 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.8A 1.2 V μA μA ICBO Collector cut-off current VCB=250V ;IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=1A ; VCE=5V 20 Switching times μs μs μs ton Turn-on time IC=4A; IB1=-IB2=-0.4A RL=20Ω 1.0 tstg Storage time 2.0 tf Fall time 1.0 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2768 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC2768 4