2SC2830

JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 20 200 200 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=12A; IB=2.4A IC=12A; IB=2.4A VCB=500V; IE=0 VCE=400V; IB=0 VEB=7V; IC=0 IC=2.4A ; VCE=5V IC=12A ; VCE=5V 15 10 MIN 400 2SC2830 TYP. MAX UNIT V 1.2 1.5 0.1 0.1 0.1 50 V V mA mA mA 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2830 Fig.2 Outline dimensions 3