2SC2832

JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC2832 VCBO Collector-base voltage 2SC2832A VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 900 500 8 5 10 3 40 150 -55~150 V V A A A W ℃ ℃ CONDITIONS VALUE 800 V UNIT JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC2832 2SC2832A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=800V;IE=0 2SC2832 2SC2832A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 100 VCB=900V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 3 100 μA μA MHz Switching times 2SC2832 ton Turn-on time 2SC2832A tstg Storage time 2SC2832 tf Fall time 2SC2832A 1.2 IC=3A ; IB1=-IB2=-0.6A VCC=200V 1.2 3.0 1.0 μs μs 1.0 μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2832 2SC2832A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3