2SC3063

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION ・With TO-126 package ・High VCEO ・Low COB APPLICATIONS ・For TV video output amplification PINNING（see Fig.2） PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.2 1.2 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO hFE COB fT PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=3m A IC=30mA ; VCE=10V IC=10μA;IE=0 IC=100μA; IB=0 IE=10μA; IC=0 IC=5mA ; VCE=50V IE=0; VCB=30V;f=1MHz IE=-20mA ; VCB=30V 70 300 300 7 50 2.4 MIN 2SC3063 TYP. MAX 1.5 1.2 UNIT V V V V V 250 pF MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3063 Fig.2 outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3063 4