2SC3117

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA1249 ・High breakdown voltage ・Large current capacity APPLICATIONS ・Color TV sound output;converters; Inverters’ applications ・160V/1.5A switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SC3117 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 180 160 6 1.5 2.5 1.0 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; RBE=∞ IC=10μA; IE=0 IE=10μA ; IC=0 IC=500mA; IB=50mA IC=500mA; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=100mA ; VCE=5V IC=10mA ; VCE=5V IC=50mA ; VCE=10V IE=0 ; VCB=10V;f=1MHz 100 90 MIN 2SC3117 TYP. 160 180 6 0.13 0.85 MAX UNIT V V V 0.45 1.2 1.0 1.0 400 V V μA μA 120 22 MHz pF hFE-1 Classifications R 100-200 S 140-280 T 200-400 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3117 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3117 4