2SC3158

JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION ・With TO-220F package ・High voltage ・High switching speed APPLICATIONS ・For switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 14 3 1. 5 W UNIT V V V A A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3158 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 20 80 hFE-2 DC current gain IC=4A ; VCE=5V 10 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3158 Fig.2 outline dimensions 3