2SC3163

JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching ・ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 2 50 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC3163 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=400V ;IB=0 100 μA ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3163 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3