2SC3169

JMnic Product Specification Silicon NPN Power Transistors 2SC3169 DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 4 2 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 8 MIN 400 TYP. 2SC3169 MAX UNIT V 1.0 1.5 100 100 V V μA μA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=1A ; IB1=-IB2=0.2A VCC=100V 1.0 3.0 1.0 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3169 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3