2SC3296

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION ・With TO-220Fa package ・Wide area of safe operation ・Complement to type 2SA1304 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 1.5 0.5 2 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC3296 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 150 V VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.5 V VBE Base-emitter on voltage IC=0.5A ; VCE=10V 0.85 V μA μA ICBO Collector cut-off current VCB=120V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.5A ; VCE=10V 40 140 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=10V 4 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3296 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3296 4