2SC3298B

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER 2SC3298 VCBO Collector-base voltage 2SC3298A 2SC3298B 2SC3298 VCEO Collector-emitter voltage 2SC3298A 2SC3298B VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 160 180 200 160 180 200 5 1.5 0.15 20 150 -55~150 V A A W ℃ ℃ V V UNIT JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC3298 VCEO Collector-emitter breakdown voltage 2SC3298A 2SC3298B VCEsat VBE ICBO IEBO hFE Cob fT Collector-emitter saturation voltage Emitter-base voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency 2SC3298 2SC3298A 2SC3298B CONDITIONS MIN 160 TYP. MAX UNIT IC=10mA , IB=0 180 200 V IC=0.5A, IB=50mA IC=0.5A ,VCE=5V VCB=160V, IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 70 25 100 1.5 1.0 1.0 1.0 240 V V μA μA pF MHz hFE-2 Classifications O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SC3298 2SC3298A 2SC3298B Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic