2SC3420

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION ・With TO-126 package ・High DC current gain ・Low saturation voltage ・High collector power dissipation APPLICATIONS ・Storobo flash applications ・Medium power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55～+150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 50 20 8 5 8 1 1.5 W UNIT V V V A A A JMnic Product Specification Silicon NPN Power Transistors 2SC3420 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL ICBO IEBO V(BR)CEO VCEsat VBE hFE-1 hFE-2 COb fT PARAMETER Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCB=40V;IE=0 VEB=8V;IC=0 IC=10mA ;IB=0 IC=4A ;IB=0.1A IC=4A ; VCE=2V IC=0.5A ; VCE=2V IC=4A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=0.5A ; VCE=2V, 140 70 40 100 pF MHz 20 1 1.5 600 MIN TYP. MAX 100 100 UNIT nA nA V V V hFE-1 Classifications Y 140-240 GR 200-400 BL 300-600 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3420 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3420 4