2SC3423

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION ・With TO-126 package ・Complement to type 2SA1360 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 5 150 -55～+150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50 5 1.2 W UNIT V V V mA mA JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=10mA; IB=1mA IC=10mA ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V f=1MHz IC=10mA ; VCE=5V 80 1.8 200 MIN 150 TYP. 2SC3423 MAX UNIT V 1.0 0.8 0.1 0.1 240 V V μA μA pF MHz hFE Classifications O 80-160 Y 120-240 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3423 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3423 4