2SC3451

JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION ・With TO-3PN package ・High breakdown voltage and high reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・500V/15A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 15 25 4 100 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1.2A ; VCE=10V 15 8 160 18 MIN 500 800 7 TYP. 2SC3451 MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A;RL=28.6Ω IB1=1.4A; IB2=-2.8A VCC=200V 0.5 3.0 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3451 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3451 4