2SC3456

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High breakdown voltage and high reliability ・Fast switching speed. ・Wide ASO（area of safe operation ） APPLICATIONS ・800V/1.5A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3456 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 1.5 5 0.8 40 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.75A; IB=0.15A IC=0.75A; IB=0.15A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V f=1MHz ; VCB=10V 10 8 15 35 MIN 800 1100 7 2SC3456 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V μA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; IC=1A IB1=0.2A;IB2=-0.4A; RL=400Ω 0.5 3.0 0.3 μs μs μs hFE-1 classifications K 10-20 L 15-30 M 20-40 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3456 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3456 4