2SC3465

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3465 DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 12 160 200 -65~200 UNIT V V V A W ℃ ℃ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition freuquency Collector output capacitance CONDITIONS IC=5mA; RBE=∞ IC=1mA; IE=0; IE=1mA; IC=0; IC=6A;IB=1.2A IC=6A;IB=1.2A VCB=800V;IE=0 VEB=7V;IC=0 IC=0.8A ;VCE=5V IC=4A ;VCE=5V IC=0.8A ;VCE=10V IE=0 ;VCB=10V,f=1MHz 10 10 15 240 MIN 800 1100 7 TYP. 2SC3465 MAX UNIT V V V 2.0 1.5 10 10 40 V V μA μA MHz pF hFE-1 classifications K 10-20 L 15-30 M 20-40 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3465 Fig.2 Outline dimensions 3