2SC3466

JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION ・With TO-3PN package ・High breakdown voltage and high reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・Switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 650 7 8 20 3 120 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.8A IC=4A ;IB=0.8A VCB=650V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V 10 6 120 5 MIN 650 1200 7 2SC3466 TYP. MAX UNIT V V V 3.0 1.5 100 100 40 V V μA μA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A;RL=50Ω IB1=0.8A; IB2=-1.6A VCC=200V 1.0 4.0 0.7 μs μs μs hFE-1 Classifications K 10-20 L 15-30 M 20-40 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3466 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3466 4