JMnic
Product Specification
Silicon NPN Power Transistors
2SC3507
DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1000 800 7 5 10 3 80 W UNIT V V V A A A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=1000V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz 6 6 MIN 800
2SC3507
TYP.
MAX
UNIT V
1.5 1.5 50 50
V V μA μA
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; VCC=250V IB1=0.6A ,IB2=-1.2A 1.0 2.5 0.5 μs μs μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3507
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3507
4
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