2SC3679

JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 5 10 2.5 100 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3679 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=4V 10 30 fT Transition frequency IC=0.5A ; VCE=12V 6 MHz COB Collector output capacitance f=1MHz;VCB=10V 75 pF Switching times μs μs μs ton Turn-on time IC=2.0A IB1=0.3A ,IB2=-1A VCC=250V, RL=125Ω 1.0 ts Storage time 5.0 tf Fall time 1.0 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3679 Fig.2 outline dimentions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3679 4