2SC3680

Product Specification www.jmnic.com Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching Transistor ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3680 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 7 14 3.5 120 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ,IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 10 105 6 MIN 800 0.5 1.2 100 100 30 pF MHz TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A;IB1=0.45A; IB2=-1.5A;RL=83Ω VCC=250V 1.0 5.0 1.0 μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3680 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic