2SC3686

Product Specification www.jmnic.com Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability (adoption of HVP process). ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3686 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 16 120 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=5A IB=1.2A IC=5A ;IB=1.2A VCB=1500V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V 8 MIN 800 5 1.5 1 1 TYP. MAX UNIT V V V mA mA Switching times tstg tf Storage time Fall time IC=4A; VCC=5V IB1=0.8A; IB2=-1.6A 3 0.1 0.2 μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3686 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic