2SC3688

JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High speed APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 25 150 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3688 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0A 800 V VCEsat Collector-emitter saturation voltage IC=8A ; IB=2.0A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ; IB=2.0A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0V 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0A 1.0 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times μs μs ts Storage time tf Fall time IC=6.0A IB1=1.2A;IB2=-2.4A VCC=200V 3.0 0.2 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3688 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3688 4