2SC3691

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3691 DESCRIPTION ・With TO-220Fa package ・Large current ,high speed ・Low saturation voltage APPLICATIONS ・Designed for high speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 5 10 2.5 2 W UNIT V V V A A A Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3691 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A; IB=0.3A,L=1mH IC=3A; IB=0.15 A IC=4A; IB=0.2A IC=3A; IB=0.15 A IC=4A; IB=0.2A VCB=60V; IE=0 VCE=60V; VBE=-1.5V Ta=125℃ VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=0.5A ; VCE=10V 100 100 60 70 150 pF MHz 200 400 MIN 60 0.3 0.5 1.2 1.5 10 10 1.0 10 TYP. MAX UNIT V V V V V μA μA mA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;RL=17Ω IB1=-IB2=0.15A VCC≈50V 0.3 1.5 0.3 μs μs μs hFE-2 classifications M 100-200 L 150-300 K 200-400 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3691 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3