2SC3725

JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 450 400 10 15 5 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors 2SC3725 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 0.8 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.2 V μA μA ICBO Collector cut-off current VCB=450V; IE=0 100 IEBO Emitter cut-off current VEB=10V; IC=0 100 hFE DC current gain IC=6A ; VCE=5V 10 Switching times μs μs μs ton Turn-on time IC=6A; IB1=2A IB2=-4A; RL=15Ω 1.0 ts Storage time 2.5 tf Fall time 0.5 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3725 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3