2SC3866

Product Specification www.jmnic.com Silicon Power Transistors DESCRIPTION ・With TO-220Fa package ・High speed switching ・High voltage ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3866 ・ Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 10 3 1 40 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=900V; IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 10 MIN 800 900 10 TYP. 2SC3866 MAX UNIT V V V 1.0 1.5 1.0 1.0 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150Ω Pw=20μs,Duty≤2% 1.0 4.0 0.8 μs μs μs JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SC3866 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic