2SC3870

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Wide area of safe operation APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3870 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3 2 W UNIT V V V A A A JMnic Product Specification Silicon NPN Power Transistors 2SC3870 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 100 100 TYP. MAX UNIT V V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB=0.6A;IB2=-1.2A VCC=150V 0.7 2.0 0..3 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3870 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3