JMnic
Product Specification
Silicon NPN Power Transistors
2SC3874
DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 150 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 25 5 3.5 W UNIT V V V A A A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 8 MIN 400
2SC3874
TYP.
MAX
UNIT V
1.0 1.5 100 100
V V μA μA
20
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=10A; VCC=150V IB1=2A;IB2=-4A 0.7 2.0 0.3 μs μs μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3874
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3874
4
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