2SC4004

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of foward current transfer ratio hFE ・ Wide area of safe operation (ASO) ・High-speed switching ・High collector to base voltage VCBO APPLICATIONS 2SC4004 ・For high breakdown voltage high-speed switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO Collector-emitter voltage VCES VEBO IC ICM IB PC Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 W ℃ ℃ Open collector Open base 800 7 1 2 0.3 30 V V A A A W PARAMETER Collector-base voltage CONDITIONS Open emitter VALUE 900 900 UNIT V V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 CHARACTERISTICS Tj=25 specified ℃ unless otherwise SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA , IB=0 IC=0.2A IB=0.04A IC=0.2A IB=0.04A VCB=900V IE=0 VEB=7V; IC=0 IC=0.05A ; VCE=5V IC=0.5A ; VCE=5V IC=0.05A; VCE=10V;f=1MHz MIN 800 TYP. MAX UNIT V 1.5 1.0 50 50 6 3 4 V V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.2A ;IB1=0.04A IB2=-0.04A; VCC=250V 1.0 3.0 1.0 μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic