JMnic
Product Specification
Silicon NPN Power Transistors
2SC4053
DESCRIPTION ・With TO-220C package ・High voltage,High speed switching ・High reliability
・
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 5 10 2 4 50 150 -55~150 UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT ℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A At rated voltage At rated voltage At rated voltage IC=2.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.5A ; VCE=10V 10 5 20 MIN 450 TYP.
2SC4053
MAX
UNIT V
1.0 1.5 0.1 0.1 0.1
V V mA mA mA
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.5A;IB1=0.5A; IB2=1A;RL=60Ω VBB2=4V 0.5 2.0 0.2 μs μs μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4053
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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