2SC4157

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High VCEO ・High speed switching APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 450 8 10 20 5 100 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=8V; IC=0 IC=5A ; VCE=5V 15 MIN 450 600 TYP. 2SC4157 MAX UNIT V V 1.0 2.0 100 1.0 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC≈200V IB1=-IB2=0.5A ; RL=40Ω 0.5 2.5 0.5 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4157 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3