2SC4300

JMnic Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 5 10 2.5 75 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC4300 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2A;IB=0.4A IC=2A;IB=0.4A VCB=800V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz 10 6 75 MIN 800 0.5 1.2 100 100 30 MHz pF TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=2A;IB1=0.3A;IB2=-1A; RL=125Ω;VCC=250V 1 5 1 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4300 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC4300 4