JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 6 1.5 35 150 -55~150 UNIT V V V A A A W ℃ ℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.7A ;IB=0.14A IC=0.7A ;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; VCE=12V 10 50 15 MIN 800 TYP.
2SC4304
MAX
UNIT V
0.5 1.2 100 100 30
V V μA μA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=0.7A; IB1=0.1A IB2=-0.35A VCC=250V ,RL=357Ω 0.7 4.0 0.7 μs μs μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4304
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
4
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