2SC4350

JMnic Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 10 0.5 40 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=1mA; IE=0; IE=5mA; IC=0; IC=5A; IB=5mA IC=5A; IB=5mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=5A ; VCE=2V 2000 MIN 100 100 7 2SC4350 TYP. MAX UNIT V V V 1.5 2.0 1 5.0 20000 V V μA mA hFE classifications M 2000-5000 L 4000-10000 K 8000-20000 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4350 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3