JMnic
Product Specification
Silicon NPN Power Transistors
2SC4468
DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1695 APPLICATIONS ・Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 140 6 10 4 100 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 250 20 MIN 140 TYP.
2SC4468
MAX
UNIT V
0.5 10 10 180
V μA μA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V 0.24 4.32 0.40 μs μs μs
hFE Classifications O 50-100 P 70-140 Y 90-180
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4468
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4468
4
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