JMnic
Product Specification
Silicon NPN Power Transistors
2SC4511
DESCRIPTION ・With TO-220F package ・Complement to type 2SA1725 APPLICATIONS ・Audio and general purpose
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 30 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 50 110 20 MIN 80 TYP.
2SC4511
MAX
UNIT V
0.5 10 10 180
V μA μA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A IB1=-IB2=0.3A VCC=30V ,RL=10Ω 0.16 2.60 0.34 μs μs μs
hFE Classifications O 50-100 P 70-140 Y 90-180
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4511
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4511
4
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