2SC4664

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 8 16 3 6 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.17 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Collector cut-off current ICEO IEBO hFE-1 hFE-2 fT ton ts tf Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time Storage time Fall time IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5Ω VBB2=4V At rated volatge IC=4A ; VCE=2V IC=1mA ; VCE=2V IC=0.8A ; VCE=10V 10 10 13 0.3 1.0 0.1 MHz μs μs μs At rated volatge 0.1 0.1 25 mA mA PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage CONDITIONS IC=0.1A ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A MIN 200 1.0 1.5 0.1 TYP. MAX UNIT V V V mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4664 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic