Product Specification
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Silicon NPN Power Transistors
2SC4793
DESCRIPTION ・With TO-220F package ・Complement to type 2SA1837 ・High transition frequency APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Collector dissipation Junction temperature Storage temperature TC=25℃ Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 1 0.1 20 2.0 150 -55~150 UNIT V V V A A W W ℃ ℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBE ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.5A IB=50mA IC=0.5A ; VCE=5V VCB=230V IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 20 100 MIN 230 TYP.
2SC4793
MAX
UNIT V
1.5 1.0 1.0 1.0 320
V V μA μA
pF MHz
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4793
Fig.2 Outline dimensions
JMnic
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