JMnic
Product Specification
Silicon NPN Power Transistors
2SC4940
DESCRIPTION ・With ITO-220 package ・Switching power transistor
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1200 550 7 4 8 2 4 30 150 -55~150 UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT ℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4940
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=2A ; VCE=5V IC=1mA ; VCE=5V IC=0.4A ; VCE=10V 10 10 10 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A MIN 550 1.0 1.5 TYP. MAX UNIT V V V
Switching times ton ts tf Turn-on time Storage time Fall time IC=2A;IB1=0.4A IB2=0.8A ,RL=75Ω VBB2=4V 0.8 3.0 0.3 μs μs μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4940
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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