2SC4941

Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION ・With TO-3PML package ・Switching power transistor PINNING PIN 1 2 3 Base DESCRIPTION Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 6 12 3 6 65 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon ower Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-base voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=1mA ;IE=0 IC=3A IB=0.6A IC=3A IB=0.6A VCB=1200V IE=0 VCE=RatedVCEO; IB=0 VEB=RatedVEBO; IC=0 IC=1A ; VCE=5V IC=1mA ; VCE=5V IC=0.6A ; VCE=10V 15 7 8 MIN 800 1500 TYP. 2SC4941 MAX UNIT V V 0.5 1.5 100 100 100 V V μA μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A IB1=0.6A; IB2=-1.2A VBB2=4V RL=85Ω 0.5 3.5 0.3 μs μs μs JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SC4941 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) JMnic