2SC5048

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage ・Collector metal (fin) is fully covered with mold resin APPLICATIONS ・Horizontal deflection output for high resolution display,colorTV ・High speed switching applications PINNING 2SC5048 PIN 1 2 3 Base DESCRIPTION Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 12 24 6 50 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=8A IB=2A IC=8A IB=2A VCB=1500V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IE=0.1A ; VCE=10V 10 4 160 1.7 1.0 MIN 600 TYP. 2SC5048 MAX UNIT V 3 1.4 1 10 30 8 V V mA μA pF MHz Switching times (inductive load) ts tf Storage time Fall time ICP=6A;IB1(end) =1.15A fH=64kHz 2.5 0.15 4 0.3 μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5048 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic