2SC5071

JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 12 24 4 100 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VEB=10V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IE=-1A ; VCE=12V 10 105 10 MIN 400 TYP. 2SC5071 MAX UNIT V 0.5 1.3 100 100 30 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=28.5Ω IB1=0.7A; IB2=-1.4A VCC=200V 1.0 3.0 0.5 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5071 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC5071 4