0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SC5287

2SC5287

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SC5287 - Silicon NPN Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 数据手册
  • 价格&库存
2SC5287 数据手册
JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 900 550 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5287 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 550 V VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V μA μA ICBO Collector cut-off current VCB=800V; IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=1.8A ; VCE=4V 10 25 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.35A ; VCE=12V 6 MHz Switching times μs μs μs ton Turn-on time IC=1.8A; RL=139Ω IB1=0.27A; IB2=-0.9A VCC=250V 0.7 ts Storage time 4.0 tf Fall time 0.5 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5287 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC5287 4
2SC5287 价格&库存

很抱歉,暂时无法提供与“2SC5287”相匹配的价格&库存,您可以联系我们找货

免费人工找货