JMnic
Product Specification
Silicon NPN Power Transistors
2SC5296
DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed ・Built in damper diode APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 16 60 W UNIT V V V A A
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5296
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25 A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 15 4 800 40 130 10 1 25 7 MIN TYP. MAX 5 1.5 UNIT V V V mA μA mA
Switching times tstg tf Storage time Fall time IC=4A;RL=50Ω IB1=0.8A; IB2=-1.6A VCC=200V 3.0 0.1 0.2 μs μs
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JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5296
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5296
4
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