2SC5299

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5299 ・ Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ Collectorl power dissipation 3 Junction temperature Storage temperature 150 -55~150 W ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 25 70 UNIT V V V A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5299 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=8A;IB=2 A IC=8A;IB=2 A IC=100mA;IB=0 VEB=4V ;IC=0 VCB=800V IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=8A ; VCE=5V 20 4 800 1.0 10 1 30 7 MIN TYP. MAX 5 1.5 UNIT V V V mA μA mA Switching times tstg tf Storage time Fall time IC=6A;RL=33.3Ω IB1=1.2A; IB2=-2.4A VCC=200V 3.0 0.1 0.2 μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5299 Fig.2 Outline dimensions JMnic