2SC5339

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output for medium resolution display,colorTV ・High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5339 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5339 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Forward voltage(damper diode) Transition frequency CONDITIONS IE=400mA ;IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=5A IE=0.1A ; VCE=10V 71 10 4 82 1.35 2.4 1.8 MIN 5 5 1.3 1 250 30 8 pF V MHz TYP. MAX UNIT V V V mA mA Switching times ts tf Storage time Fall time ICP=5A;IB1(end) =1.1A fH=31.5kHz 4 0.2 6 0.5 μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5339 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic