2SC5802

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage;high speed ・Wide area of safe operation APPLICATIONS ・For high voltage color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5802 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 30 60 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC5802 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 48 hFE-2 DC current gain IC=6A ; VCE=5V VCC=200V; IC=6A;IB1=1.2A IB2=-2.4A;RL =33.3Ω 7 10 μs tf Fall time 0.1 0.3 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5802 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3