2SC5895

JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION ・With TO-220F package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Power supply for audio and visual equipments such as TVs and VCRs ・Industrial equipments such as DC-DC converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 2 4 2 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5895 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2A; IB=0.25 A 0.5 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 60 V μA μA ICBO Collector cut-off current VCB=60V; IE=0 100 ICEO Collector cut-off current VCE=60V; IB=0 100 hFE-1 DC current gain IC=0.2A ; VCE=4V 60 hFE-2 DC current gain IC=1A ; VCE=4V 80 250 hFE-3 DC current gain IC=2A ; VCE=4V 30 fT Transition frequency IC=0.1A ; VCB=10V;f=10MHz 100 MHz Switching times μs μs μs ton Turn-on time IC=1A;IB1=-IB2=0.1A VCC=50V 0.2 tstg Storage time 0.7 tf Fall time 0.15 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5895 Fig.2 outline dimensions 3