2SC643A

JMnic Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION ・With TO-3 package ・High voltage,high reliability ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 2.5 50 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC643A TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V μA μA ICBO Collector cut-off current VCB=500V;IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 100 hFE DC current gain IC=2A ; VCE=15V 5 fT Transition frequency IC=0.1A ; VCE=10V 2 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC643A Fig.2 Outline dimensions 3